나노 테크놀로지의 핵심분야인 나노 소자의 개발은 소자의 다양한 응용성과 잠재성에도 불구하고 나노 소자의 제작 과정에 정교한 가공장비와 재현성이 떨어진다는 단점으로 나노 기술발달의 중요한 장애가 되고 있다. 따라서, 본 논문에서는 제작 방법이 편리하고, 비용 ...

나노 테크놀로지의 핵심분야인 나노 소자의 개발은 소자의 다양한 응용성과 잠재성에도 불구하고 나노 소자의 제작 과정에 정교한 가공장비와 재현성이 떨어진다는 단점으로 나노 기술발달의 중요한 장애가 되고 있다. 따라서, 본 논문에서는 제작 방법이 편리하고, 비용이 저렴한 spin-coated and fired (SCAF) 기법으로 만든 고품질의 금 (111) 필름과 양극 산화된 알루미늄 형틀을 이용하여 가장 편리하게 나노 구조물을 제작할 수 있는 방법에 관하여 연구하였다. 금 잉크를 실리콘 웨이퍼 위에 스핀 코팅하여 열처리 한 결과, 다양한 두께(10~200 nm)를 가진 금 필름을 제조할 수 있었다. 또한, 기존의 진공증착법으로 제작한 금 필름보다 넓은 면적으로 제작이 가능하였고, 표면의 안정성이 높게 나타났다. 제작한 SCAF 금 필름의 구조와 표면특성은 XRD, pole figure, AFM, 접촉각 측정 및 금 표면에서 알칸사이올의 자기조립 현상을 이용하여 확인하였다. 필름의 고품질은 microcontact printing (µCP)법과 direct photochemical lithography (DPCL)법을 이용하여 서브마이크론 크기를 가진 금 구조물을 제작하여 확인하였다. SCAF 금 필름 표면 위에 금 나노 입자들이 선형으로 배열된 구조를 µCP 법으로 제작할 수 있었고, 금 나노 입자들로 구성된 선 폭은 0.46~1 ㎛ 였다. 음각 µCP 법을 이용하여 실리콘 웨이퍼 위에 각각의 금 섬 면적이 9 ㎛2 인 패턴화된 금 섬들을 제작하였고, 패턴화시킬 수 있는 영역은 cm까지 확대할 수 있었다. 또한, SCAF 금 필름 위에 자기 조립된 CoFe2O4 나노 입자층으로부터 금 필름의 고품질을 확인하였다. SCAF 금 필름 위에 알칸사이올기를 자기 조립시켜 양각 (+) 과 음각 (-) DPCL 기법을 이용하여 실리콘 웨이퍼 표면 위에 패턴화된 금 필름을 제작한 결과 선 폭은 1 ㎛ 이하임을 확인하였다. 합성고무 도장 중의 하나로 쓰이는 poly(dimethylsiloxane) (PDMS) 의 표면에 양극 산화 알루미늄 형틀을 이용하여 나노 크기의 돋을 새김 문양을 제작하였다. PDMS 표면의 나노 크기를 가진 돋을 새김 육각 모양 정렬은 산화 알루미늄 형틀 표면의 음각 무늬와 정확하게 일치함을 보였다. 또한, 일정한 나노 크기를 가진 균일한 배열의 60 nm의 반경을 가진 양극 산화 알루미늄 형틀을 이용하여 2단계 열분해법으로 HAuCl4 수용액으로부터 금 나노 입자 및 금 나노 튜브를 합성하였다. 합성된 금 입자들은 직경이 약 10 nm 였고, 단결정 구조임을 확인할 수 있었다. 각각의 금 나노 입자들의 융합에 의해 형성된 금 나노 튜브의 두께는 약 12 nm 였고, 튜브의 외경과 내경은 각각 70 nm 와 45 nm 였으며, 전기저항은 3.9 ohm/cm 였다. 이러한 결과들로부터 일반적인 화학 실험실에서 고가의 가공 장비없이 센서, 단전자소자 및 TFT 등의 다양한 나노 디바이스로의 응용이 가능한 나노 구조물들을 제작할 수 있음을 확인하였다.

One of the great challenges in nanotechnology is fabrication and characterization of nanodevices which have a variety of potential application. However, a great obstacle is still in existence for developing fabrication of nanodevices due to the need o ...

One of the great challenges in nanotechnology is fabrication and characterization of nanodevices which have a variety of potential application. However, a great obstacle is still in existence for developing fabrication of nanodevices due to the need of sophisticated modern facilities and other high technology. In this thesis, therefore, the most convenient fabrication method is investigated with high quality Au (111) film prepared through inexpensive spin-coated and fired (SCAF) method and anodized alumina oxide (AAO) template. The structure and surface properties of SCAF Au film were confirmed by XRD, pole figure, AFM, advancing contact angle measurements and self-assembly of thiols. The resulting Au film with a variety of thickness (10~200 nm) showed the high surface stabiliy against mechanical shocks and specific chemisorption of alkanethiols. The quality of the film was also demonstrated by the fabrication of submicro scaled Au structures through microcontact printing (µCP) and direct photochemical lithography (DPCL). The wire type array of gold nanoparticles on SCAF Au (111) film was fabricated by µCP technique. The observed width of the gold nanowire was 0.461∼㎛. The patterned square type array of gold islands on Si (111) wafer was fabricated on the wide range of Si wafer surface through negative soft lithography. The CoFe2O4 nanoparticles on SCAF Au (111) film surface were fabricated by self assembly. The patterned gold (111) film on Si wafer was fabricated by DPCL with self assembly of thiol, through positive (+) and negative (-) DPCL. Resolution of less than 1㎛ was
obtained. The nanoembossed poly(dimethylsiloxane) (PDMS), which is one of the elastomeric stamps, was fabricated by using anodized alumina oxide (AAO) templates. The AAO template channel has ~60 nm in diameter. The hexagonal nanoembossed arrangement on the surface of PDMS is exactly the same as that of an engraving surface of AAO. The gold nanotube/ nanoparticles from HAuCl4 solution in AAO template channel were synthesized by two-step thermal decomposition without any chemical stabilizer and catalyst. Gold nanotubes with 12 nm wall thickness were formed through the random consolidation of individual gold crystal (dia. 10 nm) and showed partially perfect single crystalline. The outer diameter and the inner diameter of gold nanotubes were ~ 70 nm and 45 nm, respectively. Gold nanotube were electrical conductor showing perfect ohmic behavior with apparent electrical resistivity (ρ), 3.9 ohm·cm. The fabrication method of nanostuctures developed in this work will give a great advantage to assemble the sophiscated modern nanodevice in the ambient laboratory environment.

One of the great challenges in nanotechnology is fabrication and characterization of nanodevices which have a variety of potential application. However, a great obstacle is still in existence for developing fabrication of nanodevices due to the need o ...

One of the great challenges in nanotechnology is fabrication and characterization of nanodevices which have a variety of potential application. However, a great obstacle is still in existence for developing fabrication of nanodevices due to the need of sophisticated modern facilities and other high technology. In this thesis, therefore, the most convenient fabrication method is investigated with high quality Au (111) film prepared through inexpensive spin-coated and fired (SCAF) method and anodized alumina oxide (AAO) template. The structure and surface properties of SCAF Au film were confirmed by XRD, pole figure, AFM, advancing contact angle measurements and self-assembly of thiols. The resulting Au film with a variety of thickness (10~200 nm) showed the high surface stabiliy against mechanical shocks and specific chemisorption of alkanethiols. The quality of the film was also demonstrated by the fabrication of submicro scaled Au structures through microcontact printing (µCP) and direct photochemical lithography (DPCL). The wire type array of gold nanoparticles on SCAF Au (111) film was fabricated by µCP technique. The observed width of the gold nanowire was 0.461∼㎛. The patterned square type array of gold islands on Si (111) wafer was fabricated on the wide range of Si wafer surface through negative soft lithography. The CoFeO nanoparticles24 on SCAF Au (111) film surface were fabricated by self assembly. The patterned gold (111) film on Si wafer was fabricated by DPCL with self assembly of thiol, through positive (+) and negative (-) DPCL. Resolution of less than 1㎛ was
ii
obtained. The nanoembossed poly(dimethylsiloxane) (PDMS), which is one of the elastomeric stamps, was fabricated by using anodized alumina oxide (AAO) templates. The AAO template channel has ~60 nm in diameter. The hexagonal nanoembossed arrangement on the surface of PDMS is exactly the same as that of an engraving surface of AAO. The gold nanotube/ nanoparticles from HAuCl4 solution in AAO template channel were synthesized by two-step thermal decomposition without any chemical stabilizer and catalyst. Gold nanotubes with 12 nm wall thickness were formed through the random consolidation of individual gold crystal (dia. 10 nm) and showed partially perfect single crystalline. The outer diameter and the inner diameter of gold nanotubes were ~ 70 nm and 45 nm, respectively. Gold nanotube were electrical conductor showing perfect ohmic behavior with apparent electrical resistivity (ρ), 3.9 ohm·cm. The fabrication method of nanostuctures developed in this work will give a great advantage to assemble the sophiscated modern nanodevice in the ambient laboratory environment.

The fabrication of nanostructures based on soft lithography and direct photochemical lithography (DPCL) with SCAF Au (111) film were successfully performed. Also, nanoscaled materials were fabricated through the template synthesis in the nanochannel o ...

The fabrication of nanostructures based on soft lithography and direct photochemical lithography (DPCL) with SCAF Au (111) film were successfully performed. Also, nanoscaled materials were fabricated through the template synthesis in the nanochannel of anodized alumina oxide (AAO). The nanostructures prepared in this thesis will give a great advantage to assemble the sophiscated modern nanodevice.